Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition
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چکیده
منابع مشابه
Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition
ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2....
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2013
ISSN: 1556-276X
DOI: 10.1186/1556-276x-8-144